Prof Alon Hoffman and his co-workers have published recently a paper entitled “Novel Ultra Localized and Dense Nitrogen Delta-Doping in Diamond for Advanced Quantum Sensing” in the prestigious scientific journal “Nanoletters”.
In this paper they have introduced and demonstrated a new approach for nitrogen-vacancy (NV) patterning in diamond, achieving a deterministic, nanometer-thin, and dense delta-doped layer of negatively charged NV centers in diamond. This delta-doping technique on high-quality fabricated diamond nanostructures for realizing a topographic NV patterning in order to enhance the sensing and hyperpolarization capabilities of NV-based devices. This paper represents the culmination of 5 years of intensive research work starting from an idea of how to create a buried atomic thick nitrogen monolayer in a diamond crystal to measuring some quantum properties of this structure that may be of large importance in quantum technologies.
To read the full paper click here.